Simulation of frequency properties of operational amplifiers in analog-degetal signal processing devices

Abstract

The mathematical models of frequency properties of operational amplifiers (OAs), formed by submicron combined gallium arsenide and silicon technologies, are presented. This approach considerably increases the dynamic range of voltage, frequency and temperature in analog-digital signal processing devices. The paper describes three areas of application of OAs. In the first area, a modernised differential cascade based on bipolar or Schottki field transistors is used, which ensures the symmetry of its characteristics and high speed. The second class of tasks relates to the development of active RC-filters, in which unpacked OA is the active element, formed by submicron gallium arsenide and silicon technologies, and RC-links formed by the original tantalum technology. The simulation of active RC-filters based on gyrators performed on OAs is realised. The use of a gyrator eliminates completely the use of inductive elements. The third type of task represents the simulation of comparators formed on unpacked OAs, which allows their effective use in microcontrollers of analog-to-digital and digital-to-analog converters at digital processing of signals.