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Please use this identifier to cite or link to this item: http://hdl.handle.net/123456789/7104
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dc.contributor.authorДзундза, Богдан Степанович-
dc.contributor.authorМазур, Тетяна Михайлівна-
dc.contributor.authorПрокопів, Володимир Васильович-
dc.contributor.authorМазур, Мирослав Павлович-
dc.date.accessioned2020-05-12T08:15:22Z-
dc.date.available2020-05-12T08:15:22Z-
dc.date.issued2019-
dc.identifier.citation2. Mazur M.P., Dzundza B.S., Mazur T.M., Prokopiv V.V. Method of research of photoelectric parameters of high impedance semiconductor films. Journal of New Technologies in Environmental Science. 2019. Vol. 3, No. 1. P. 30-36.uk_UA
dc.identifier.urihttp://hdl.handle.net/123456789/7104-
dc.description.abstractThe method of measuring the electrical conductivity and photoconductivity of semiconductor films with high electrical resistance is described. The developed computer program providing automation of measurements, as well as registration and initial processing of data is presented. The photoelectric properties of CdTe semiconductor films are investigated depending on technological factors of their obtaining. The activation energy of the mobility was determined and it was shown that for the films obtained on fresh cleavages of mica, this energy is less than twice that of films obtained on polished glass substrates.uk_UA
dc.language.isoenuk_UA
dc.subjectsolar energy, electrical parameters, photoconductivity, automation, mobilityuk_UA
dc.titleMethod of research of photoelectric parameters of high impedance semiconductor filmsuk_UA
dc.title.alternativeСтаттяuk_UA
dc.typeArticleuk_UA
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