Distribution of own defects in monocrystal epitaxial films PbTe

Abstract

Was shown, that dimensional effects in the monocrystal PbTe n-type films which has been grown on mica substrates by the method of a hot wall, connected with distributions of dopands and the centres of dispersion of free charge carriers. Approximation of experimental effective dependences of conductivity ¾(d) and product of Hall coefficient and square of conductivity R(d)¾2(d) from a thickness by theoretical dependences was executed.Spatial parameters of distributions of defects of growth on a boundary substrate-film and dislocations in a following layer were received. Proceeding from layered heterogeneity of the thin semiconductor PbTe films which has been grown by the method of a hot wall, were found three layers enriched free electrons to different values of concentration and two layers of the centres of dispersion connected with different types of crystal defects: interphase boundaries, dislocations, dot defects and other.