QUASICHEMICAL MODELLING OF DEFECT SUBSYSTEM OF TIN TELLURIDE CRYSTALS

Please use this identifier to cite or link to this item: http://hdl.handle.net/123456789/4782

Full metadata record

DC Field	Value	Language
dc.contributor.author	Прокопів, Володимир Васильович	-
dc.contributor.author	Туровська, Лілія Вадимівна	-
dc.contributor.author	Горічок, Ігор Володимирович	-
dc.contributor.author	Никируй, Любомир Іванович	-
dc.date.accessioned	2020-04-09T18:37:47Z	-
dc.date.available	2020-04-09T18:37:47Z	-
dc.date.issued	2016	-
dc.identifier.citation	Chalcogenide Letters Vol. 13, No. 7, July 2016, p. 309 - 315	uk_UA
dc.identifier.uri	http://hdl.handle.net/123456789/4782	-
dc.description.abstract	By the method of modelling with quasichemical reactions, formation of native atomic defects in tin telluride crystals has been described. Based on the analysis of electroneutrality condition, concentration dependences of charge carriers and point defects on the temperature and partial vapour pressure of tellurium have been found. The constants of corresponding reactions have been specified.	uk_UA
dc.language.iso	en	uk_UA
dc.relation.ispartofseries	Chalcogenide Letters;Vol. 13, No. 7, July 2016, p. 309 - 315	-
dc.subject	Tin Telluride, Point Defects, Quasichemistry, Equilibrium Constants, Two-Temperature Annealing.	uk_UA
dc.title	QUASICHEMICAL MODELLING OF DEFECT SUBSYSTEM OF TIN TELLURIDE CRYSTALS	uk_UA
dc.title.alternative	Стаття	uk_UA
dc.type	Article	uk_UA
Appears in Collections:	Статті та тези (ФТФ)

Files in This Item:

File	Description	Size	Format
309_ProkopivV.pdf		714.36 kB	Adobe PDF	View/Open

DSpace JSPUI