QUASICHEMICAL MODELLING OF DEFECT SUBSYSTEM OF TIN TELLURIDE CRYSTALS

Please use this identifier to cite or link to this item: http://hdl.handle.net/123456789/4782

Title:	QUASICHEMICAL MODELLING OF DEFECT SUBSYSTEM OF TIN TELLURIDE CRYSTALS
Other Titles:	Стаття
Authors:	Прокопів, Володимир Васильович Туровська, Лілія Вадимівна Горічок, Ігор Володимирович Никируй, Любомир Іванович
Keywords:	Tin Telluride, Point Defects, Quasichemistry, Equilibrium Constants, Two-Temperature Annealing.
Issue Date:	2016
Citation:	Chalcogenide Letters Vol. 13, No. 7, July 2016, p. 309 - 315
Series/Report no.:	Chalcogenide Letters;Vol. 13, No. 7, July 2016, p. 309 - 315
Abstract:	By the method of modelling with quasichemical reactions, formation of native atomic defects in tin telluride crystals has been described. Based on the analysis of electroneutrality condition, concentration dependences of charge carriers and point defects on the temperature and partial vapour pressure of tellurium have been found. The constants of corresponding reactions have been specified.
URI:	http://hdl.handle.net/123456789/4782
Appears in Collections:	Статті та тези (ФТФ)

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