Please use this identifier to cite or link to this item:
http://hdl.handle.net/123456789/4777
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Фреїк, Дмитро Михайлович | - |
dc.contributor.author | Мудрий, Степан Іванович | - |
dc.contributor.author | Прокопів, Володимир Васильович | - |
dc.contributor.author | Горічок, Ігор Володимирович | - |
dc.contributor.author | Матківський, Остап Миколайович | - |
dc.contributor.author | Арсенюк, Інна Олександрівна | - |
dc.contributor.author | Криницький, Олександр Степанович | - |
dc.contributor.author | Бойчук, Володимира Михайлівна | - |
dc.date.accessioned | 2020-04-09T14:31:09Z | - |
dc.date.available | 2020-04-09T14:31:09Z | - |
dc.date.issued | 2016 | - |
dc.identifier.citation | Ukr. J. Phys. 2016. Vol. 61, No. 2 | uk_UA |
dc.identifier.uri | http://hdl.handle.net/123456789/4777 | - |
dc.description.abstract | X-ray researches are carries out, and the thermoelectric coefficient 𝛼 and the specific conductivity 𝜎 are measured for tin telluride specimens doped with bismuth to concentrations of 0–2.0 at.% Bi. Non-monotonic dependences of the unit cell parameter and the electrical parameters on the Bi impurity content are demonstrated. The introduction of bismuth to 1.0 at.% is found to favor an increase in the thermoelectric power 𝛼2𝜎 in SnTe at temperatures 𝑇 > 500 K as a result of the thermoelectric coefficient growth. | uk_UA |
dc.language.iso | en | uk_UA |
dc.relation.ispartofseries | Український фізичний журнал.;2016. Vol. 61, No. 2 | - |
dc.subject | tin telluride, doping, thermoelectric properties | uk_UA |
dc.title | THERMOELECTRIC PROPERTIES OF BISMUTH-DOPED TIN TELLURIDE SnTe:Bi | uk_UA |
dc.title.alternative | Стаття | uk_UA |
Appears in Collections: | Статті та тези (ФТФ) |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
Ukjourph_2016_61_2_11 (2).pdf | 593.47 kB | Adobe PDF | View/Open |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.