Please use this identifier to cite or link to this item: http://hdl.handle.net/123456789/4777
Full metadata record
DC FieldValueLanguage
dc.contributor.authorФреїк, Дмитро Михайлович-
dc.contributor.authorМудрий, Степан Іванович-
dc.contributor.authorПрокопів, Володимир Васильович-
dc.contributor.authorГорічок, Ігор Володимирович-
dc.contributor.authorМатківський, Остап Миколайович-
dc.contributor.authorАрсенюк, Інна Олександрівна-
dc.contributor.authorКриницький, Олександр Степанович-
dc.contributor.authorБойчук, Володимира Михайлівна-
dc.date.accessioned2020-04-09T14:31:09Z-
dc.date.available2020-04-09T14:31:09Z-
dc.date.issued2016-
dc.identifier.citationUkr. J. Phys. 2016. Vol. 61, No. 2uk_UA
dc.identifier.urihttp://hdl.handle.net/123456789/4777-
dc.description.abstractX-ray researches are carries out, and the thermoelectric coefficient 𝛼 and the specific conductivity 𝜎 are measured for tin telluride specimens doped with bismuth to concentrations of 0–2.0 at.% Bi. Non-monotonic dependences of the unit cell parameter and the electrical parameters on the Bi impurity content are demonstrated. The introduction of bismuth to 1.0 at.% is found to favor an increase in the thermoelectric power 𝛼2𝜎 in SnTe at temperatures 𝑇 > 500 K as a result of the thermoelectric coefficient growth.uk_UA
dc.language.isoenuk_UA
dc.relation.ispartofseriesУкраїнський фізичний журнал.;2016. Vol. 61, No. 2-
dc.subjecttin telluride, doping, thermoelectric propertiesuk_UA
dc.titleTHERMOELECTRIC PROPERTIES OF BISMUTH-DOPED TIN TELLURIDE SnTe:Biuk_UA
dc.title.alternativeСтаттяuk_UA
Appears in Collections:Статті та тези (ФТФ)

Files in This Item:
File Description SizeFormat 
Ukjourph_2016_61_2_11 (2).pdf593.47 kBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.