Кристалохімія власних атомних дефектів і термодинамічний n-p-перехід у кристалах PbSe

Abstract

We examined the n-p-transition in the crystals of PbSe at the twotemperature anneal. The experimental result are explained by the creation of own atomic defects: interstitial atoms of lead ( ), and vacancies of lead ( ). The received analytical expressions describe the n-p-transition and also a dependence of concentration of charge carries on the temperature of anneal and partial pressure of the vapors of selenium. The technological conditions of formation the PbSe crystals with electric properties set before hand are determined.