Thermodynamic analysis of processes creating the defects in cadmium telluride crystals under conditions of high-temperature annealing

Please use this identifier to cite or link to this item: http://hdl.handle.net/123456789/2948

Title:	Thermodynamic analysis of processes creating the defects in cadmium telluride crystals under conditions of high-temperature annealing
Other Titles:	Стаття
Authors:	Прокопів, Володимир Васильович Фочук, Петро Михайлович Горічок, Ігор Володимирович Вержак, Євгенія Василівна
Keywords:	two-temperature annealing, thermodynamic potential, point defects, electrical properties, cadmium telluride.
Issue Date:	2009
Citation:	Semiconductor Physics, Quantum Electronics & Optoelectronics, 2009. V. 12, N 4. P. 412-416.
Series/Report no.:	Semiconductor Physics, Quantum Electronics & Optoelectronics;2009. V. 12, N 4. P. 412-416.
Abstract:	The defective structure of specifically undoped cadmium telluride crystals was researched using the theory of thermodynamic potentials. The calculated concentration of point defects and free charge carriers in the CdTe crystals, depending on technological factors of two-temperature annealing (annealing temperature T and partial pressure of cadmium PCd vapor). The dominant types of defects that determine the basic properties of the material n- and p-type conduction were determined.
URI:	http://hdl.handle.net/123456789/2948
Appears in Collections:	Статті та тези (ФТФ)

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