The investigation of the constructive and technological features of epitaxial gallium-arsenide structures formation on silicon substrates

Abstract

The technology of formation of LSI structures on GaAs epitaxial layers, formed on Si-substrates of large diameter, is developed, which makes it possible at least by an order of magnitude to reduce the production cost of crystals due to epitaxial growth of GaAs layers and the use of technological equipment of silicon technology. This technology also enables the useof heterostructures to increase the speed of the LSI.

An analysis of complex structures of different architecture of IC/LSI on GaAs epitaxial layers, formed on Si-substrates, is carried out. The influence of the scattering processes of charge carriers on the potential fluctuations on the magnitude and profile of the mobility of electrons along the thickness of the epitaxial structure is investigated. When using epitaxial technology in structures, there are no isoconcentric impurities of oxygen and carbon, which are the factors of scattering of charge carriers, which makes it possible to achieve high values of mobility of charge carriers.

It is shown that the use of epitaxial layers of gallium arsenide eliminates the effects of isoconcentration impurities of oxygen and carbon in gallium arsenide layers that increases their purity. A test element was implemented that allows non-destructive measurement of the mobility of charge carriers in the technological cycle of the formation of LSI structures. This allows us to realise the electrophysical diagnosis of the reliability of the LSI at the stage of crystal manufacturing