Please use this identifier to cite or link to this item: http://hdl.handle.net/123456789/10912
Title: Charge Carrier Transport of Polysilicon in SOI-Structures at Low Temperatures
Authors: Druzhinin, A.
Kogut, I.
Khoverko, Yu.
Vuitsyk, A.
Keywords: SOI-structures
temperature
Issue Date: 2013
Publisher: Vasyl Stefanyk Precarpathian National University
Citation: Druzhinin A. A. Charge Carrier Transport of Polysilicon in SOI-Structures at Low Temperatures / А. A. Druzhinin, І. Т. Kogut, Yu. N. Khoverko, А. N. Vuitsyk // Physics and Chemistry of Solid State. - 2013. - Vol. 14. - № 3. - P. 662-666.
Abstract: The studies of temperature dependence of conductivity and magnetoresistance of SOI-structures with polysilicon resistors with carrier concentration 2,4·1018 сm -3 before recrystallization in temperature range 4,2 – 300 K are presented. The dimensions of polysilicon resistor in SOI-structure are 80 mm × 8 mm × 0,5 mm.
URI: http://hdl.handle.net/123456789/10912
Appears in Collections:Т. 14, № 3

Files in This Item:
File Description SizeFormat 
!1403-36.pdf253.24 kBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.