Please use this identifier to cite or link to this item:
http://hdl.handle.net/123456789/10912
Title: | Charge Carrier Transport of Polysilicon in SOI-Structures at Low Temperatures |
Authors: | Druzhinin, A. Kogut, I. Khoverko, Yu. Vuitsyk, A. |
Keywords: | SOI-structures temperature |
Issue Date: | 2013 |
Publisher: | Vasyl Stefanyk Precarpathian National University |
Citation: | Druzhinin A. A. Charge Carrier Transport of Polysilicon in SOI-Structures at Low Temperatures / А. A. Druzhinin, І. Т. Kogut, Yu. N. Khoverko, А. N. Vuitsyk // Physics and Chemistry of Solid State. - 2013. - Vol. 14. - № 3. - P. 662-666. |
Abstract: | The studies of temperature dependence of conductivity and magnetoresistance of SOI-structures with polysilicon resistors with carrier concentration 2,4·1018 сm -3 before recrystallization in temperature range 4,2 – 300 K are presented. The dimensions of polysilicon resistor in SOI-structure are 80 mm × 8 mm × 0,5 mm. |
URI: | http://hdl.handle.net/123456789/10912 |
Appears in Collections: | Т. 14, № 3 |
Files in This Item:
File | Description | Size | Format | |
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!1403-36.pdf | 253.24 kB | Adobe PDF | View/Open |
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